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一种多晶硅除硼提纯方法

摘要:一种多晶硅除硼提纯方法,涉及一种多晶硅的除硼提纯工艺。提供一种高效,低成本,操作简单,适合大规模工业化生产的多晶硅除硼提纯方法。选用金属硅为原料;将原料金属硅放入石墨坩埚中,抽真空,启动中频感应电源加热,使石墨坩埚中的金属硅熔化;当硅全部熔化后,向体系中通入惰性气体,提高电源功率,使硅液温度保持在1500~1600℃,加入预熔过的第一种助渣剂反应,进一步提高电源功率,使硅液温度保持在1600~1700℃,再加入预熔后的第二种助渣剂;待造渣完成后,将硅液倒入浇注用坩埚中,静置,冷却后取出硅锭,得到提纯后的多晶硅锭。
Abstract: The invention discloses a boron-removing purification method of polysilicon, relates to a boron-removing purification process of polysilicon, and provides a boron-removing purification method of polysilicon, which has high efficiency, low cost and simple operation and is applicable to large-scale industrial production. The boron-removing purification method comprises the following steps; selectingsilicon metal as the raw material, putting the silicon metal into a graphite crucible, conducting vacuum-pumping, and starting a mid-frequency induction power for heating to melt the silicon metal inthe graphite crucible; when all the silicon is melt, introducing inert gas into the system, increasing the power to lead the liquid silicon temperature to be kept between 1500 DEG C and 1600 DEG C, adding a first pre-melted slagging-promoting agent for reaction, further increasing the power to lead the liquid silicon temperature to be kept between 1600 DEG C and 1700 DEG C, and adding a second pre-melted slagging-promoting agent; after completing slagging, pouring the liquid silicon into a pouring crucible, standing, and taking out silicon ingots after cooling, thus obtaining the purified polysilicon ingots.
申请人: 厦门大学
Applicant: UNIV XIAMEN
地址: 361005福建省********(隐藏)
发明(设计)人: 罗学涛 蔡靖 李锦堂 郑淞生 陈文辉 沈晓杰 龚惟扬 陈朝
Inventor: XUETAO LUO; JING CAI; JINTANG LI; SONGSHENG ZHENG; WENHUI CHEN; XIAOJIE SHEN; WEIYANG GONG; CHAO CHEN
主分类号: C01B33/037(2006.01)I
分类号: C01B33/037(2006.01)I

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文章名称:《一种多晶硅除硼提纯方法》
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